GlobalFoundries Bolsters Power Management Solutions Through Tagore Technology Acquisition

MALTA, N.Y. — In a strategic move that underscores its commitment to innovation in the semiconductor industry, GLOBALFOUNDRIES Inc. ( GFS ) has announced the acquisition of the high-performance Gallium Nitride (GaN) IP portfolio from Tagore Technology. This acquisition positions GFS at the forefront of power management technology, enabling the company to offer cutting-edge solutions that promise significantly enhanced performance and power efficiency.

Expanding GaN Capabilities

The proprietary GaN technology obtained through the acquisition offers high power density, a crucial factor for the development of disruptive power management solutions. As a result of this move, GFS is poised to advance its power management offerings, catering to the increasing demand for energy-efficient technologies in various end markets, including automotive, data centers, and telecommunications. The GaN technology is poised to transform the landscape of power semiconductors, providing GFS with a competitive edge in the rapidly evolving industry.

Strategic Impact on GlobalFoundries

With its headquarters based in Malta, New York, GFS is already a leading player in the global semiconductor foundry market. The integration of Tagore Technology's GaN IP is expected to accelerate GFS's growth trajectory by opening up new avenues for innovation. By leveraging the acquired GaN technology, GFS is better equipped to create power management solutions that meet the higher efficiency and performance standards required by modern electronic devices and systems. This strategic acquisition signifies GFS's solid commitment to maintaining its technological leadership and delivering exceptional value to its customers.

GlobalFoundries, acquisition, GaN